FDC6318P mosfet equivalent, dual p-channel 1.8v powertrench specified mosfet.
*
–2.5 A,
–12 V. RDS(ON) = 90 mΩ @ VGS =
–4.5 V RDS(ON) = 125 mΩ @ VGS =
–2.5 V RDS(ON) = 200 mΩ @ VGS.
* Power management
* Load switch
S1 D1
D2
4 5
G2
3 2 1
SuperSOT
TM
-6
G1
S2
6
Absolute Maximum Rating.
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
F.
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